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| HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 AD TO-268 Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C IXFH 12N90Q IXFT 12N90Q VDSS ID25 RDS(on) = 900 V = 12 A = 0.9 W trr 200 ns Maximum Ratings 900 900 20 30 12 48 12 30 5 300 -55 ... +150 150 -55 ... +150 300 1.13/10 6 4 V V V V A A A mJ V/ns W C C C C Nm/lb.in. g g TO-247 AD (IXFH) TO-268 (D3) ( IXFT) G S G = Gate S = Source D = Drain TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 900 2.5 5.5 100 TJ = 25C TJ = 125C 50 1 0.9 V V nA mA mA W * IXYS advanced low Qg process * Low gate charge and capacitances - easier to drive - faster switching * International standard packages * Low RDS (on) * Unclamped Inductive Switching (UIS) rated * Molding epoxies meet UL 94 V-0 flammability classification VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V Advantages * Easy to mount * Space savings * High power density 98572 (11/98) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-2 IXFH 12N90Q IXFT 12N90Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 6 10 2900 VGS = 0 V, VDS = 25 V, f = 1 MHz 315 50 20 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External), 23 40 15 90 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 30 40 0.42 (TO-247) 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25, pulse test Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 12 48 1.3 A A V J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = IS, -di/dt = 100 A/ms, VR = 100 V 200 0.6 7 ns mC A TO-268AA (D3 PAK) Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 Min. Recommended Footprint (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-2 |
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